SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND MEMORY
Download Read
Applicant
Inc. Changxin Memory Technologies
Representative
V .O.
Application number
EP22786259A1
Kind
A1
Document number
4322223
Shortcuts
→Abstract
→Claims
→References by patents

Classifications

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND MEMORY

4322223 - EP22786259A1 - EPO

Application Jun 28, 2022 - Publication Feb 14, 2024

Deyuan XIAO Guangsu SHAO

Abstract

Disclosed in embodiments of the present application are a semiconductor structure and a method for manufacturing the same, and a memory. The semiconductor structure comprises: a substrate, a plurality of oxide pillars, a plurality of active pillars, a first insulating layer and a storage structure. The plurality of oxide pillars are on the substrate and arranged in an array along a first direction and a second direction. Both the first direction and the second direction are parallel to a surface of the substrate, and the first direction intersects with the second direction. The first insulating layer is in a gap between the oxide pillars. Each active pillar is on a top surface of a corresponding one of the oxide pillars. The storage structure covers at least part of a side wall of the active pillar.

Description

Claims

Patent References

Patent Publication Date Title
CN202210708966 N/A N/A
Back to top

Statistics

Seen <100 times
Downloaded <100 times