Applicant
Vijay Immanuel Raman
Applicant
Sophia Ebert
Applicant
Mario Brands
Applicant
Yongqing Lan
Applicant
Philipp Zacharias
Applicant
Ilshat Gubaydullin
Applicant
Yuzhuo Li
Grantee
BASF SE
Primary examiner
Nadine G Norton
Primary examiner
Christopher Remavege
Application number
13510830
Kind
B2
Document number
10392531
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Process for Removing a Bulk Material Layer From a Substrate and a Chemical Mechanical Polishing Agent Suitable for This Process

10392531 - 13510830 - USPTO

Application Nov 25, 2010 - Publication Aug 27, 2019

Vijay Immanuel Raman Sophia Ebert Mario Brands Yongqing Lan Philipp Zacharias Ilshat Gubaydullin Yuzhuo Li

Abstract

A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start, —an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices.

Description

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