INTERCONNECTION STRUCTURE AND MANUFACTURE METHOD THEREOF
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Applicant
Invention And Collaboration Laboratory Pte. Ltd.
Representative
Christian Krauns
Application number
EP22160752A3
Kind
A3
Document number
4057330
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INTERCONNECTION STRUCTURE AND MANUFACTURE METHOD THEREOF

4057330 - EP22160752A3 - EPO

Application Mar 08, 2022 - Publication Jan 11, 2023

Chao-Chun LU

Abstract

An interconnection structure includes a first dielectric layer, a first conduction layer, a conductor pillar, an upper dielectric layer and an upper conduction layer. The first dielectric layer is disposed over a first terminal of a device. The first conduction layer is disposed over the first dielectric layer. The conductor pillar is connected to the first terminal. The upper dielectric layer is disposed over the first conduction layer. The upper conduction layer is disposed over the upper dielectric layer. The conductor pillar connects to the upper conduction layer but disconnects from the first conduction layer.

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