Applicant
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
Grantee
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
Primary examiner
Sue A Purvis
Primary examiner
Leslie Pilar Cruz
Application number
15498272
Kind
B2
Document number
10290724
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Finfet Devices Having a Material Formed on Reduced Source/Drain Region

10290724 - 15498272 - USPTO

Application Apr 26, 2017 - Publication May 14, 2019

Xinyun Xie

Abstract

A semiconductor device includes a fin structure of a first semiconductor material on a substrate. The fin structure has a source region, a drain region, and a channel region between the source region and the drain region. The device also has a gate structure overlying the fin structure. The source region includes an inner portion of the first semiconductor material and an outer portion of a second semiconductor material overlying a top surface and side surfaces of the inner portion. The drain region includes an inner portion of the first semiconductor material and an outer portion of the second semiconductor material overlying a top surface and side surfaces of the inner portion.

Description

Claims

Other sources for this patent

  • Finfet Devices Having a Material Formed on Reduced Source/Drain Region

    20170229559 - 15498272 - USPTO

    Application Apr 26, 2017 - Publication Aug 10, 2017

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