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Self-referenced multi-bit thermally assisted magnetic random access memories

Published in Applied Physics Letters

The feasibility of 3-bits per cell storage in self-referenced thermally assisted magnetic random access memories is demonstrated both by macrospin simulations and experiments. The memory dot consists of a storage layer where CoFe/CoFeB magnetization direction is pinned by an IrMn layer using the ferromagnet/antiferromagnet interfacial exchange coup...